Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells

Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells

Descripteurs français

• Pascal (Inist)
  • 7321A, 7321F, Etude théorique, Indium composé, Gallium composé, Semiconducteur III-V, Puits quantique semiconducteur, Etat interface, Transition métal isolant, Relation dispersion, Bande interdite, Calcul k.p, Effet contrainte.

English descriptors

• KwdEn :
  • Dispersion relations, Energy gap, Gallium compounds, III-V semiconductors, Indium compounds, Interface states, Metal-insulator transition, Semiconductor quantum wells, Stress effects, Theoretical study, k.p calculations.

Abstract

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Pascal:02-0462786

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Le document en format XML

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<s1>Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, Republic of China</s1>

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<wicri:regionArea>Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan</wicri:regionArea>

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<div type="abstract" xml:lang="en">We investigate the hybridization of the electron, heavy-hole and/or light-hole dispersion relations in strained InAs/GaSb quantum wells. In the considered structures, the lowest electron level lies below several hole levels at zero in-plane wave vector k∥, so that the anticrossings of subbands produce gaps in the in-plane dispersions. To calculate the electronic band structures of such quantum wells grown on different substrates, we use the eight-band kp model and the scattering matrix method. We have found that the order of levels at the zone center (k∥=0), gap positions and magnitudes can change due to the lattice-mismatched strain. Strain can also enhance the hybridization of electron and light-hole states at k∥=0 considerably. In the structure with a thick InAs layer grown on GaSb, we have obtained a negative indirect gap in the in-plane dispersion resulting from the anticrossing of electronlike and highest heavy-hole-like subbands. If the substrate is InAs, the gap becomes direct and positive. This phenomenon can be treated as strain-induced semimetal-semiconductor phase transition.</div>

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